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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUF405AFP * www..com DESCRIPTION *With TO-220F package *High voltage,high speed APPLICATIONS *Switch mode power supplies *Motor drivers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current (DC) Base current-Peak Total power dissipation Maximum operating junction temperature Storage temperature tp<5ms TC=25 tp<5ms CONDITIONS Open emitter Open base Open collector VALUE 1000 450 7 7.5 15 3 4.5 39 150 -65~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction to case VALUE 3.2 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdwon voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current CONDITIONS IC=200mA ; IB=0; L=25mH IE=50mA ;IC=0 IC=2.5A; IB=0.25A TC=100 IC=5A ;IB=1A TC=100 IC=2.5A; IB=0.25A TC=100 IC=5A ;IB=1A TC=100 VCE=1000V; VBE=-1.5V TC=100 VEB=5V; IC=0 MIN 450 7 www..com BUF405AFP SYMBOL VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICEV IEBO TYP. MAX UNIT V V 0.8 2.8 0.5 2.0 0.9 1.5 1.1 1.5 100 500 1 V V V V A mA Switching times inductive load ts tf Storage time Fall time 0.8 0.05 s s IC=2.5A ;VCC=50V IB1 =0.25A;VBB=-5V ;L=1mH RBB=2.4B;Vclamp=400V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www..com BUF405AFP Fig.2 Outline dimensions 3 |
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